换一批2015年第44卷09期
共11篇1. The electronic structure calculations of two-dimensional transition-metal dichalcogenides in the presence of external electric and magnetic fields. 2603-14页
作者：Agnieszka,Kuc； Thomas,Heine
2. Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials. 2615-28页
作者：Chaoliang,Tan； Zhengdong,Liu； Wei,Huang； Hua,Zhang
3. Semiconducting black phosphorus: synthesis, transport properties and electronic applications. 2732-43页
作者：Han,Liu； Yuchen,Du； Yexin,Deng； Peide D,Ye
4. Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material. 2757-85页
作者：Xin,Zhang； Xiao-Fen,Qiao； Wei,Shi； Jiang-Bin,Wu； De-Sheng,Jiang； Ping-Heng,Tan
5. Two-dimensional transition metal dichalcogenide (TMD) nanosheets. 2584-6页
作者：Manish,Chhowalla； Zhongfan,Liu； Hua,Zhang
6. Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques. 2744-56页
作者：Yumeng,Shi； Henan,Li； Lain-Jong,Li
8. Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides. 2643-63页
作者：Gui-Bin,Liu； Di,Xiao； Yugui,Yao； Xiaodong,Xu； Wang,Yao
9. Physical and chemical tuning of two-dimensional transition metal dichalcogenides. 2664-80页
作者：Haotian,Wang； Hongtao,Yuan； Seung,Sae Hong； Yanbin,Li； Yi,Cui
