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Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory.

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第一作者： Susant K,Acharya

第一单位： Department of Physics and Oxide Research Centre, Hankuk University of Foreign Studies , Yongin 449-791, Korea.

作者： Susant K,Acharya ^[1] ; Raveendra Venkata,Nallagatla ^[1] ; Octolia,Togibasa ^[1] ; Bo W,Lee ^[1] ; Chunli,Liu ^[1] ; Chang U,Jung ^[1] ; Bae Ho,Park ^[2] ; Ji-Yong,Park ^[3] ; Yunae,Cho ^[4] ; Dong-Wook,Kim ^[4] ; Janghyun,Jo ^[5] ; Deok-Hwang,Kwon ^[5] ; Miyoung,Kim ^[5] ; Cheol Seong,Hwang ^[6] ; Seung C,Chae ^[7]

作者单位： Department of Physics and Oxide Research Centre, Hankuk University of Foreign Studies , Yongin 449-791, Korea. ^[1] Division of Quantum Phases and Devices, Department of Physics, Konkuk University , Seoul 143-791, Korea. ^[2] Department of Physics and Department of Energy Systems Research, Ajou University , Suwon 443-749, Korea. ^[3] Department of Physics, Ewha Womans University , Seoul 120-750, Korea. ^[4] Department of Material Science and Engineering, Seoul National University , Seoul 151-747, Korea. ^[5] Department of Material Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University , Seoul 151-744, Korea. ^[6] Department of Physics Education, Seoul National University , Seoul 151-748, Korea. ^[7]

关键词 RRAM SrFeOx thin film atomically smooth surface brownmillerite structure uniform switching parameters

DOI 10.1021/acsami.6b00647

PMID 26955744

发布时间 2016-03-30

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