Neural electrode resilience against dielectric damage may be improved by use of highly doped silicon as a conductive material

导出原文传递

翻译打印收藏纠错

作者： Caldwell, Ryan ^[1] ; Sharma, Rohit ^[2] ; Takmakov, Pavel ^[3] ; Street, Matthew G. ; Solzbacher, Florian ; Tathireddy, Prashant ; Rieth, Loren

作者单位： US FDA, Div Biol Chem & Mat Sci, OSEL, CDRH,White Oak Fed Res Ctr, Silver Spring, MD USA ^[1] Univ Utah, Dept Elect & Comp Engn, Salt Lake City, UT USA ^[2] Univ Utah, Dept Bioengn, Salt Lake City, UT 84112 USA ^[3]

关键词 Neural interface Utah array Electrochemical impedance Parylene C Neuroprosthetics Dielectric encapsulation Finite element analysis Accelerated aging Shunting Doped silicon Electrode materials

发布时间 2018-06-26

翻译满意度评价：

准确一般字义偏差语意偏离译文作用小提交

浏览0

Journal of Neuroscience Methods

2018年293卷

210-225页

相似文献

中文期刊
外文期刊
学位论文
会议论文

检索历史清除

Neural electrode resilience against dielectric damage may be improved by use of highly doped silicon as a conductive material

Journal of Neuroscience Methods

相似文献

Journal of Neuroscience Methods

相关期刊

参考文献：
指定格式：	NoteExpress EndNote RefWorks NoteFirst

检索历史 清除

Neural electrode resilience against dielectric damage may be improved by use of highly doped silicon as a conductive material

Journal of Neuroscience Methods

相似文献

Journal of Neuroscience Methods

相关期刊

检索历史清除