Reducing leakage currents in n-channel organic field-effect transistors using molecular dipole monolayers on nanoscale oxides.

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第一作者： Josué F,Martínez Hardigree

第一单位： Department of Materials Science and Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland 21218, United States.

作者： Josué F,Martínez Hardigree ^[1] ; Thomas J,Dawidczyk ; Robert M,Ireland ; Gary L,Johns ; Byung-Jun,Jung ; Mathias,Nyman ; Ronald,Osterbacka ; Nina,Marković ; Howard E,Katz

作者单位： Department of Materials Science and Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland 21218, United States. ^[1]

DOI 10.1021/am401278p

PMID 23845125

发布时间 2013-08-14

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ACS applied materials & interfaces

2013年5卷15期

7025-32页

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Reducing leakage currents in n-channel organic field-effect transistors using molecular dipole monolayers on nanoscale oxides.

ACS applied materials & interfaces

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ACS applied materials & interfaces

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Reducing leakage currents in n-channel organic field-effect transistors using molecular dipole monolayers on nanoscale oxides.

ACS applied materials & interfaces

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ACS applied materials & interfaces

相关期刊

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