Photovoltaic performance of bithiazole-bridged dyes-sensitized solar cells employing semiconducting quantum dot CuInS2 as barrier layer material.

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作者： Fuling,Guo ^[1] ; Jinxiang,He ; Jing,Li ; Wenjun,Wu ; Yandi,Hang ; Jianli,Hua

作者单位： Key Laboratory for Advanced Materials and Institute of Fine Chemicals, East China University of Science & Technology, 130 Meilong Road, Shanghai 200237, PR China. ^[1]

关键词 Barrier layer Bithiazole dye High open-circuit voltage Quantum dot CuInS(2)Solar cells

DOI 10.1016/j.jcis.2013.06.069

PMID 23928484

发布时间 2013-08-26

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Journal of colloid and interface science

2013年408卷

59-65页

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Photovoltaic performance of bithiazole-bridged dyes-sensitized solar cells employing semiconducting quantum dot CuInS2 as barrier layer material.

Journal of colloid and interface science

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Journal of colloid and interface science

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Photovoltaic performance of bithiazole-bridged dyes-sensitized solar cells employing semiconducting quantum dot CuInS2 as barrier layer material.

Journal of colloid and interface science

相似文献

Journal of colloid and interface science

相关期刊

检索历史清除