Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.

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作者： Ken,Everaerts ^[1] ; Li,Zeng ; Jonathan W,Hennek ; Diana I,Camacho ; Deep,Jariwala ; Michael J,Bedzyk ; Mark C,Hersam ; Tobin J,Marks

作者单位： Department of Chemistry, ‡Department of Materials Science and Engineering, §Department of Medicine, ⊥Department of Physics and Astronomy, and #Graduate Program in Applied Physics, Northwestern University , Evanston, Illinois 60208, United States. ^[1]

DOI 10.1021/am403585n

PMID 24187917

发布时间 2013-11-27

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ACS applied materials & interfaces

2013年5卷22期

11884-93页

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Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.

ACS applied materials & interfaces

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ACS applied materials & interfaces

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Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.

ACS applied materials & interfaces

相似文献

ACS applied materials & interfaces

相关期刊

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