Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide.

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第一作者： Avinash P,Nayak

第一单位： 1] Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, USA [2].

作者： Avinash P,Nayak ^[1] ; Swastibrata,Bhattacharyya ^[2] ; Jie,Zhu ^[3] ; Jin,Liu ^[4] ; Xiang,Wu ^[4] ; Tribhuwan,Pandey ^[5] ; Changqing,Jin ^[6] ; Abhishek K,Singh ^[5] ; Deji,Akinwande ^[7] ; Jung-Fu,Lin ^[4]

作者单位： 1] Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, USA [2]. ^[1] 1] Materials Research Center, Indian Institute of Science, Bangalore 560-012, India [2]. ^[2] 1] Department of Geological Sciences, The University of Texas at Austin, Austin, Texas 78712, USA [2] Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. ^[3] Department of Geological Sciences, The University of Texas at Austin, Austin, Texas 78712, USA. ^[4] Materials Research Center, Indian Institute of Science, Bangalore 560-012, India. ^[5] Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. ^[6] Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, USA. ^[7]

DOI 10.1038/ncomms4731

PMID 24806118

发布时间 2014-05-08

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Nature communications

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Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide.

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Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide.

Nature communications

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