Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation.

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第一作者： Huabin,Sun

第一单位： School of Electronic Science and Engineering, Collaborative Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China.

作者： Huabin,Sun ^[1] ; Qijing,Wang ^[1] ; Yun,Li ^[1] ; Yen-Fu,Lin ^[2] ; Yu,Wang ^[1] ; Yao,Yin ^[1] ; Yong,Xu ^[2] ; Chuan,Liu ^[2] ; Kazuhito,Tsukagoshi ^[2] ; Lijia,Pan ^[1] ; Xizhang,Wang ^[3] ; Zheng,Hu ^[3] ; Yi,Shi ^[1]

作者单位： School of Electronic Science and Engineering, Collaborative Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China. ^[1] International Centre for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan. ^[2] Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China. ^[3]

DOI 10.1038/srep07227

PMID 25428665

发布时间 2018-11-13

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Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation.

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Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation.

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