Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green.

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第一作者： Guo-En,Weng

第一单位： Department of Physics and Semiconductor Photonics Research Center, Xiamen University, 422 South Siming Road, Xiamen, 361005 P. R. China.

作者： Guo-En,Weng ^[1] ; Wan-Ru,Zhao ^[2] ; Shao-Qiang,Chen ^[3] ; Hidefumi,Akiyama ^[4] ; Zeng-Cheng,Li ^[5] ; Jian-Ping,Liu ^[5] ; Bao-Ping,Zhang ^[2]

作者单位： Department of Physics and Semiconductor Photonics Research Center, Xiamen University, 422 South Siming Road, Xiamen, 361005 P. R. China. ^[1] Department of Electronic Engineering, Optoelectronics Engineering Research Center, Xiamen University, 422 South Siming Road, Xiamen, 361005 P. R. China. ^[2] Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 Japan ; Department of Electronic Engineering, East China Normal University, 500 Dongchuan Road, Shanghai, 200241 P. R. China. ^[3] Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 Japan. ^[4] Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou, 215123 P. R. China. ^[5]

关键词 Carrier relaxation dynamics InGaN Localization effect Quantum dots

DOI 10.1186/s11671-015-0772-z

PMID 25852328

发布时间 2020-09-29

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Nanoscale research letters

2015年10卷

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Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green.

Nanoscale research letters

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Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green.

Nanoscale research letters

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Nanoscale research letters

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