Lattice-Matched InGaAs-InAlAs Core-Shell Nanowires with Improved Luminescence and Photoresponse Properties.

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第一作者： Julian,Treu

第一单位： †Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4, Garching, 85748, Germany.

作者： Julian,Treu ^[1] ; Thomas,Stettner ^[2] ; Marc,Watzinger ^[1] ; Stefanie,Morkötter ^[3] ; Markus,Döblinger ^[1] ; Sonja,Matich ^[4] ; Kai,Saller ^[1] ; Max,Bichler ^[1] ; Gerhard,Abstreiter ^[1] ; Jonathan J,Finley ^[1] ; Julian,Stangl ^[2] ; Gregor,Koblmüller ^[5]

作者单位： †Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Am Coulombwall 4, Garching, 85748, Germany. ^[1] ‡Nanosystems Initiative Munich (NIM), Schellingstrasse 4, München, 80799, Germany. ^[2] ⊥Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, Linz, 4040, Austria. ^[3] ∥Deparment of Chemistry, Ludwig-Maximilian Universität München, Butenandtstrasse 5-13, München, 81377, Germany. ^[4] §Institute for Advanced Study, Technische Universität München, Lichtenbergstraße 2a, Garching, 85748, Germany. ^[5]

关键词 HRXRD InGaAs nanowires catalyst-free selective area growth energy conversion efficiency photoluminescence strain

DOI 10.1021/acs.nanolett.5b00979

PMID 25922974

发布时间 2024-03-22

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