Band structure engineering via piezoelectric fields in strained anisotropic CdSe/CdS nanocrystals.

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第一作者： Sotirios,Christodoulou

第一单位： 1] Nanochemistry Department, Istituto Italiano di Tecnologia, via Morego 30, IT-16163 Genova, Italy [2] Department of Physics, University of Genoa, via Dodecaneso 33, IT-16146 Genova, Italy.

作者： Sotirios,Christodoulou ^[1] ; Fernando,Rajadell ^[2] ; Alberto,Casu ^[3] ; Gianfranco,Vaccaro ^[4] ; Joel Q,Grim ^[3] ; Alessandro,Genovese ^[3] ; Liberato,Manna ^[3] ; Juan I,Climente ^[2] ; Francesco,Meinardi ^[4] ; Gabriele,Rainò ^[5] ; Thilo,Stöferle ^[5] ; Rainer F,Mahrt ^[5] ; Josep,Planelles ^[2] ; Sergio,Brovelli ^[4] ; Iwan,Moreels ^[3]

作者单位： 1] Nanochemistry Department, Istituto Italiano di Tecnologia, via Morego 30, IT-16163 Genova, Italy [2] Department of Physics, University of Genoa, via Dodecaneso 33, IT-16146 Genova, Italy. ^[1] Departament de Quimica Fisica i Analitica, Universitat Jaume I, ES-12080 Castellón, Spain. ^[2] Nanochemistry Department, Istituto Italiano di Tecnologia, via Morego 30, IT-16163 Genova, Italy. ^[3] Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, via Cozzi 55, IT-20125 Milano, Italy. ^[4] IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland. ^[5]

DOI 10.1038/ncomms8905

PMID 26219691

发布时间 2018-11-13

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Nature communications

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Band structure engineering via piezoelectric fields in strained anisotropic CdSe/CdS nanocrystals.

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Band structure engineering via piezoelectric fields in strained anisotropic CdSe/CdS nanocrystals.

Nature communications

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