首页> ACS applied materials & interfaces> Enhancement of Efficiency of a Solar Cell Fabricated on Black Si Made by Inductively Coupled Plasma-Reactive Ion Etching Process: A Case Study of a n-CdS/p-Si Heterojunction Cell.

Enhancement of Efficiency of a Solar Cell Fabricated on Black Si Made by Inductively Coupled Plasma-Reactive Ion Etching Process: A Case Study of a n-CdS/p-Si Heterojunction Cell.

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第一作者： Ajit K,Katiyar

第一单位： S. N. Bose National Center for Basic Sciences , Block-JD, Sector-III, Salt Lake, Kolkata 700098, India.

作者： Ajit K,Katiyar ^[1] ; S,Mukherjee ; M,Zeeshan ; Samit K,Ray ; A K,Raychaudhuri

作者单位： S. N. Bose National Center for Basic Sciences , Block-JD, Sector-III, Salt Lake, Kolkata 700098, India. ^[1]

关键词 CdS/Si heterojunction black Si inductively coupled plasma?reactive ion etching radial heterojunction surface recombination velocity

DOI 10.1021/acsami.5b04978

PMID 26451949

发布时间 2015-10-28

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ACS applied materials & interfaces

2015年7卷42期

23445-53页

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ACS applied materials & interfaces

2015年7卷42期

23445-53页

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Enhancement of Efficiency of a Solar Cell Fabricated on Black Si Made by Inductively Coupled Plasma-Reactive Ion Etching Process: A Case Study of a n-CdS/p-Si Heterojunction Cell.

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Enhancement of Efficiency of a Solar Cell Fabricated on Black Si Made by Inductively Coupled Plasma-Reactive Ion Etching Process: A Case Study of a n-CdS/p-Si Heterojunction Cell.

ACS applied materials & interfaces

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