Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)2Te3.

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第一作者： Mao,Ye

第一单位： State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China.

作者： Mao,Ye ^[1] ; Wei,Li ^[2] ; Siyuan,Zhu ^[1] ; Yukiharu,Takeda ^[2] ; Yuji,Saitoh ^[3] ; Jiajia,Wang ^[4] ; Hong,Pan ^[4] ; Munisa,Nurmamat ^[5] ; Kazuki,Sumida ^[6] ; Fuhao,Ji ^[3] ; Zhen,Liu ^[3] ; Haifeng,Yang ^[6] ; Zhengtai,Liu ^[6] ; Dawei,Shen ^[1] ; Akio,Kimura ^[1] ; Shan,Qiao ^[1] ; Xiaoming,Xie ^[2]

作者单位： State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China. ^[1] CAS-Shanghai Science Research Center, 239 Zhang Heng Road, Shanghai 201203, China. ^[2] Graduate School of Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan. ^[3] Condensed Matter Science Division, Quantum Beam Science Center, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan. ^[4] School of physical science and technology, ShanghaiTech University, 319 Yueyang Road, Shanghai 200031, China. ^[5] Department of Physics, State Key Laboratory of Surface Physics, and Laboratory of Advanced Materials, Fudan University, Shanghai 200433, China. ^[6]

DOI 10.1038/ncomms9913

PMID 26582485

发布时间 2019-04-23

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Nature communications

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Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)2Te3.

Nature communications

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Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)2Te3.

Nature communications

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Nature communications

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