Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors.

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作者： Junmo,Kang ^[1] ; Deep,Jariwala ^[2] ; Christopher R,Ryder ^[1] ; Spencer A,Wells ^[2] ; Yongsuk,Choi ^[1] ; Euyheon,Hwang ^[2] ; Jeong Ho,Cho ^[1] ; Tobin J,Marks ^[2] ; Mark C,Hersam ^[1]

作者单位： Department of Materials Science and Engineering, ⊥Department of Chemistry, and #Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States. ^[1] SKKU Advanced Institute of Nanotechnology (SAINT), §School of Chemical Engineering, and ∥Department of Physics, Sungkyunkwan University , Suwon 440-746, Republic of Korea. ^[2]

关键词 Phosphorene Schottky barrier heterostructure short channel van der Waals

主题词石墨(Graphite);硫化物(Sulfides);晶体管, 电子(Transistors, Electronic);过渡元素(Transition Elements)

DOI 10.1021/acs.nanolett.6b00144

PMID 26950174

发布时间 2020-09-30

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