Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications.

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第一作者： K,Moratis

第一单位： Department of Materials Science and Technology, University of Crete, P.O. Box 2208, 70013, Heraklion, Greece.

作者： K,Moratis ^[1] ; S L,Tan ^[2] ; S,Germanis ^[3] ; C,Katsidis ^[1] ; M,Androulidaki ^[4] ; K,Tsagaraki ^[1] ; Z,Hatzopoulos ^[4] ; F,Donatini ^[4] ; J,Cibert ^[4] ; Y-M,Niquet ^[5] ; H,Mariette ^[3] ; N T,Pelekanos ^[6]

作者单位： Department of Materials Science and Technology, University of Crete, P.O. Box 2208, 70013, Heraklion, Greece. ^[1] CEA, INAC, 17 rue des Martyrs, 38054, Grenoble cedex 9, France. ^[2] Université Grenoble Alpes, F-38000, Grenoble, France. ^[3] Microelectronics Research Group, IESL-FORTH, P.O. Box 1385, 71110, Heraklion, Greece. ^[4] Department of Physics, University of Crete, P.O. Box 2208, 70013, Heraklion, Greece. ^[5] CNRS, Institut NEEL, F-38000, Grenoble, France. ^[6] Department of Materials Science and Technology, University of Crete, P.O. Box 2208, 70013, Heraklion, Greece. pelekano@materials.uoc.gr. ^[7] CEA, INAC, 17 rue des Martyrs, 38054, Grenoble cedex 9, France. pelekano@materials.uoc.gr. ^[8] Université Grenoble Alpes, F-38000, Grenoble, France. pelekano@materials.uoc.gr. ^[9] Microelectronics Research Group, IESL-FORTH, P.O. Box 1385, 71110, Heraklion, Greece. pelekano@materials.uoc.gr. ^[10]

关键词 Cathodoluminescence Core-shell GaAs/InGaAs nanowires Micro-Raman Micro-photoluminescence Nanostructure characterization Photoluminescence

DOI 10.1186/s11671-016-1384-y

PMID 27037927

发布时间 2020-09-30

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