Evolution of electronic states in n-type copper oxide superconductor via electric double layer gating.

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第一作者： Kui,Jin

第一单位： Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

作者： Kui,Jin ^[1] ; Wei,Hu ^[2] ; Beiyi,Zhu ^[3] ; Dohun,Kim ^[1] ; Jie,Yuan ^[1] ; Yujie,Sun ^[3] ; Tao,Xiang ^[4] ; Michael S,Fuhrer ^[1] ; Ichiro,Takeuchi ^[1] ; Richard L,Greene ^[1]

作者单位： Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. ^[1] Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China. ^[2] Center for Nanophysics and Advanced Materials and Department of Physics, University of Maryland, College Park, Maryland 20742, USA. ^[3] Department of Material Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea. ^[4] School of Physics, Monash University, Melbourne, Victoria 3800, Australia. ^[5] Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA. ^[6]

DOI 10.1038/srep26642

PMID 27221198

发布时间 2018-11-13

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Evolution of electronic states in n-type copper oxide superconductor via electric double layer gating.

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Evolution of electronic states in n-type copper oxide superconductor via electric double layer gating.

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