Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface.

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第一作者： Roy,Winter

第一单位： Department of Materials Science and Engineering, Technion-Israel Institute of Technology , Haifa 3200003, Israel.

作者： Roy,Winter ^[1] ; Pini,Shekhter ^[1] ; Kechao,Tang ^[2] ; Luca,Floreano ^[3] ; Alberto,Verdini ^[3] ; Paul C,McIntyre ^[2] ; Moshe,Eizenberg ^[1]

作者单位： Department of Materials Science and Engineering, Technion-Israel Institute of Technology , Haifa 3200003, Israel. ^[1] Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States. ^[2] Laboratorio TASC, IOM-CNR , Area di Ricerca, Trieste 34149, Italy. ^[3]

关键词 InGaAs MOS XPS high-k high-mobility metal-oxide-semiconductor scavenging synchrotron

DOI 10.1021/acsami.6b02957

PMID 27282201

发布时间 2018-07-18

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