Piezophototronic Effect in Single-Atomic-Layer MoS<sub>2</sub> for Strain-Gated Flexible Optoelectronics.

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作者： Wenzhuo,Wu ^[1] ; Lei,Wang ^[2] ; Ruomeng,Yu ^[1] ; Yuanyue,Liu ^[3] ; Su-Huai,Wei ^[3] ; James,Hone ^[4] ; Zhong Lin,Wang ^[5]

作者单位： School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA. ^[1] Department of Electrical Engineering, Columbia University, New York, NY, 10027, USA. ^[2] National Renewable Energy Laboratory (NREL), Golden, CO, 80401, USA. ^[3] Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA. ^[4] School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA. zhong.wang@mse.gatech.edu. ^[5] Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, 100083, Beijing, China. zhong.wang@mse.gatech.edu. ^[6]

关键词 adaptive optoelectronics monolayer MoS2 piezophototronic effect

DOI 10.1002/adma.201602854

PMID 27486923

发布时间 2020-10-01

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