Laser Level Scheme of Self-Interstitials in Epitaxial Ge Dots Encapsulated in Si.

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作者： Martyna,Grydlik ^[1] ; Mark T,Lusk ^[2] ; Florian,Hackl ^[1] ; Antonio,Polimeni ^[3] ; Thomas,Fromherz ^[1] ; Wolfgang,Jantsch ^[1] ; Friedrich,Schäffler ^[1] ; Moritz,Brehm ^[1]

作者单位： Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz , Altenberger Strasse 69, A-4040 Linz, Austria. ^[1] Department of Physics, Colorado School of Mines , Golden, Colorado 80401, United States. ^[2] CNISM and Department of Physics, Sapienza Università di Roma , Piazzale A. Moro 2, 00185 Roma, Italy. ^[3]

关键词 Silicon photonics defect engineering density functional theory photoluminescence spectroscopy quantum dots

DOI 10.1021/acs.nanolett.6b02494

PMID 27701863

发布时间 2024-03-27

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