Memristive Devices with Highly Repeatable Analog States Boosted by Graphene Quantum Dots.

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第一作者： Changhong,Wang

第一单位： Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372, Singapore.

作者： Changhong,Wang ^[1] ; Wei,He ^[1] ; Yi,Tong ^[1] ; Yishu,Zhang ^[1] ; Kejie,Huang ^[1] ; Li,Song ^[1] ; Shuai,Zhong ^[1] ; Rajasekaran,Ganeshkumar ^[1] ; Rong,Zhao ^[1]

作者单位： Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372, Singapore. ^[1]

关键词 graphene quantum dots nano oxygen-reservoirs neural networks repeatable analog resistance states

DOI 10.1002/smll.201603435

PMID 28296020

发布时间 2019-11-20

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Small (Weinheim an der Bergstrasse, Germany)

2017年13卷20期

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Memristive Devices with Highly Repeatable Analog States Boosted by Graphene Quantum Dots.

Small (Weinheim an der Bergstrasse, Germany)

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Small (Weinheim an der Bergstrasse, Germany)

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Memristive Devices with Highly Repeatable Analog States Boosted by Graphene Quantum Dots.

Small (Weinheim an der Bergstrasse, Germany)

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Small (Weinheim an der Bergstrasse, Germany)

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