InGaN/GaN nanowires as a new platform for photoelectrochemical sensors - detection of NADH.

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第一作者： M,Riedel

第一单位： Biosystems Technology, Institute of Applied Life Sciences, Technical University of Applied Sciences Wildau, 15745 Wildau, Germany.

作者： M,Riedel ^[1] ; S,Hölzel ^[2] ; P,Hille ^[2] ; J,Schörmann ^[3] ; M,Eickhoff ^[2] ; F,Lisdat ^[4]

作者单位： Biosystems Technology, Institute of Applied Life Sciences, Technical University of Applied Sciences Wildau, 15745 Wildau, Germany. ^[1] I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany; Institute of Solid State Physics, University of Bremen, Bremen, Germany. ^[2] I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany. ^[3] Biosystems Technology, Institute of Applied Life Sciences, Technical University of Applied Sciences Wildau, 15745 Wildau, Germany. Electronic address: flisdat@th-wildau.de. ^[4]

关键词 InGaN/GaN nanowires NADH sensing Photoelectrochemical sensor Photoelectrochemistry

主题词生物传感技术(Biosensing Techniques);镓(Gallium);铟(Indium);NAD(NAD);纳米结构(Nanostructures);纳米线(Nanowires)

DOI 10.1016/j.bios.2017.03.022

PMID 28315593

发布时间 2017-11-29

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