Graphene FETs with Low-Resistance Hybrid Contacts for Improved High Frequency Performance.

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作者： Chowdhury,Al-Amin ^[1] ; Mustafa,Karabiyik ^[2] ; Phani Kiran,Vabbina ^[3] ; Raju,Sinha ^[4] ; Nezih,Pala ^[5]

作者单位： Department of Electrical and Computer Engineering, Florida International University, Miami, FL 33174, USA. calam003@fiu.edu. ^[1] Department of Electrical and Computer Engineering, Florida International University, Miami, FL 33174, USA. mkara006@fiu.edu. ^[2] Department of Electrical and Computer Engineering, Florida International University, Miami, FL 33174, USA. pvabb001@fiu.edu. ^[3] Department of Electrical and Computer Engineering, Florida International University, Miami, FL 33174, USA. rsinh001@fiu.edu. ^[4] Department of Electrical and Computer Engineering, Florida International University, Miami, FL 33174, USA. npala@fiu.edu. ^[5]

关键词 access resistance capacitive coupling current-gain cut-off frequency graphene field-effect transistor (GFET)radio frequency

DOI 10.3390/nano6050086

PMID 28335214

发布时间 2020-10-01

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Nanomaterials (Basel, Switzerland)

2016年6卷5期

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Graphene FETs with Low-Resistance Hybrid Contacts for Improved High Frequency Performance.

Nanomaterials (Basel, Switzerland)

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Graphene FETs with Low-Resistance Hybrid Contacts for Improved High Frequency Performance.

Nanomaterials (Basel, Switzerland)

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