In Situ Control of Oxygen Vacancies in TaO<sub>x</sub> Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications.

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作者： Konstantin V,Egorov ^[1] ; Dmitry S,Kuzmichev ^[1] ; Pavel S,Chizhov ^[2] ; Yuri Yu,Lebedinskii ^[1] ; Cheol Seong,Hwang ^[3] ; Andrey M,Markeev ^[4]

作者单位： Moscow Institute of Physics and Technology , Institutskii Lane 9, 141700 Dolgoprudny, Russian Federation. ^[1] Chemistry Department, Moscow State University , Leninskie Gory 1, 119992 Moscow, Russian Federation. ^[2] National Research Nuclear University , Moscow Engineering Physics Institute, Kashirskoye Shosse 31, 115409 Moscow, Russian Federation. ^[3] Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University , Seoul 08826, Republic of Korea. ^[4]

关键词 PEALD ReRAM TaOx hydrogen plasma reliability

DOI 10.1021/acsami.7b00778

PMID 28350159

发布时间 2018-07-25

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ACS applied materials & interfaces

2017年9卷15期

13286-13292页

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In Situ Control of Oxygen Vacancies in TaO<sub>x</sub> Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications.

ACS applied materials & interfaces

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In Situ Control of Oxygen Vacancies in TaO<sub>x</sub> Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications.

ACS applied materials & interfaces

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ACS applied materials & interfaces

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