换一批
换一批Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating.
作者：
关键词
105 Low-Dimension (1D/2D) materials201 Electronics / Semiconductor / TCOs212 Surface and interfaces302 Crystallization / Heat treatment / Crystal growth305 Plasma / Laser processing306 Thin film / Coatings40 Optical, magnetic and electronic device materialsEpitaxial growthHall effectargonatomic-layer dopingboroncarrier mobilityplasma-enhanced chemical-vapor depositionsilicon
DOI
10.1080/14686996.2017.1312520
PMID
28567175
发布时间
2021-01-09
- 浏览9
Science and technology of advanced materials
2017年18卷1期
294-306页
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