Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al<sub>2</sub>O<sub>3</sub> Thin-Film Transistors on Ultrasmooth and Clear Nanopaper.

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作者： Honglong,Ning ^[1] ; Yong,Zeng ^[1] ; Yudi,Kuang ^[2] ; Zeke,Zheng ^[1] ; Panpan,Zhou ^[2] ; Rihui,Yao ^[1] ; Hongke,Zhang ^[1] ; Wenzhong,Bao ^[3] ; Gang,Chen ^[2] ; Zhiqiang,Fang ^[1] ; Junbiao,Peng ^[2]

作者单位： State Key Laboratory of Luminescent Materials and Devices, South China University of Technology , Guangzhou, Guangdong 510640, China. ^[1] State Key Laboratory of Pulp and Paper Engineering, South China University of Technology , Guangzhou, Guangdong 510640, China. ^[2] State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University , Shanghai 200433, China. ^[3] Key Laboratory of Pulp and Paper Science & Technology of Ministry of Education/Shandong Province, Qilu University of Technology , Jinan, Shandong 250353, China. ^[4]

关键词 IGZO semiconductor cellulose nanofiber nanopaper electrical properties thin-film transistor ultrasmooth

DOI 10.1021/acsami.7b07525

PMID 28767216

发布时间 2018-07-26

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