Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors.

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作者： Jae Sang,Heo ^[1] ; Seungbeom,Choi ^[2] ; Jeong-Wan,Jo ^[3] ; Jingu,Kang ^[4] ; Ho-Hyun,Park ^[5] ; Yong-Hoon,Kim ^[6] ; Sung Kyu,Park ^[7]

作者单位： School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea. heojs38@gmail.com. ^[1] SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea. oyenice@skku.edu. ^[2] School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea. jzw0108@nate.com. ^[3] School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea. uangelion@gmail.com. ^[4] School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea. hohyun@cau.ac.kr. ^[5] SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea. yhkim76@skku.edu. ^[6] School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06980, Korea. skpark@cau.ac.kr. ^[7]

关键词 high mobility hybrid gate dielectric low temperature solution-process metal-oxide semiconductors thin-film transistors

DOI 10.3390/ma10060612

PMID 28772972

发布时间 2020-10-01

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