High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes.

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第一作者： Sarah,Riazimehr

第一单位： University of Siegen, School of Science and Technology, Department of Electrical Engineering and Computer Science, Hölderlinstr. 3, 57076 Siegen, Germany.;RWTH Aachen University, Faculty of Electrical Engineering and Information Technology, Chair for Electronic Devices, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany.

作者： Sarah,Riazimehr ^[1] ; Satender,Kataria ^[1] ; Rainer,Bornemann ^[2] ; Peter,Haring Bolívar ^[2] ; Francisco Javier Garcia,Ruiz ^[3] ; Olof,Engström ^[2] ; Andres,Godoy ^[3] ; Max C,Lemme ^[1]

作者单位： University of Siegen, School of Science and Technology, Department of Electrical Engineering and Computer Science, Hölderlinstr. 3, 57076 Siegen, Germany.;RWTH Aachen University, Faculty of Electrical Engineering and Information Technology, Chair for Electronic Devices, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany. ^[1] University of Siegen, School of Science and Technology, Department of Electrical Engineering and Computer Science, Hölderlinstr. 3, 57076 Siegen, Germany. ^[2] Departmento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada, Spain. ^[3]

关键词 Schottky diode graphene heterojunction inversion layer photocurrent

DOI 10.1021/acsphotonics.7b00285

PMID 28781983

发布时间 2020-10-01

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ACS photonics

2017年4卷6期

1506-1514页

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High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes.

ACS photonics

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High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes.

ACS photonics

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