Effective absorption correction for energy dispersive X-ray mapping in a scanning transmission electron microscope: analysing the local indium distribution in rough samples of InGaN alloy layers.

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第一作者： X,Wang

第一单位： Department of Electronic and Electrical Engineering, University of Sheffield, North Campus, Sheffield, UK.

作者： X,Wang ^[1] ; M-P,Chauvat ^[2] ; P,Ruterana ^[2] ; T,Walther ^[1]

作者单位： Department of Electronic and Electrical Engineering, University of Sheffield, North Campus, Sheffield, UK. ^[1] CIMAP, UMR 6252, CNRS-ENSICAEN-CEA-UCBN, Caen, Cedex, France. ^[2]

关键词 Absorption correction X-ray microanalysis energy-dispersive X-ray spectroscopy (EDXS)indium gallium nitride (InGaN)islanding transmission electron microscopy (TEM)

DOI 10.1111/jmi.12643

PMID 28960349

发布时间 2019-11-20

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Journal of microscopy

2017年268卷3期

248-253页

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Effective absorption correction for energy dispersive X-ray mapping in a scanning transmission electron microscope: analysing the local indium distribution in rough samples of InGaN alloy layers.

Journal of microscopy

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Journal of microscopy

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Effective absorption correction for energy dispersive X-ray mapping in a scanning transmission electron microscope: analysing the local indium distribution in rough samples of InGaN alloy layers.

Journal of microscopy

相似文献

Journal of microscopy

相关期刊

检索历史清除