Neural electrode resilience against dielectric damage may be improved by use of highly doped silicon as a conductive material.

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作者： Ryan,Caldwell ^[1] ; Rohit,Sharma ^[2] ; Pavel,Takmakov ^[2] ; Matthew G,Street ^[2] ; Florian,Solzbacher ^[3] ; Prashant,Tathireddy ^[4] ; Loren,Rieth ^[5]

作者单位： Department of Bioengineering, University of Utah, Salt Lake City, UT, USA. Electronic address: ryan.caldwell@utah.edu. ^[1] Division of Biology, Chemistry and Materials Science, OSEL, CDRH, U.S. FDA, White Oak Federal Research Center, Silver Spring, MD, USA. ^[2] Department of Bioengineering, University of Utah, Salt Lake City, UT, USA; Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, USA; Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT, USA. ^[3] Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, USA. ^[4] Department of Bioengineering, University of Utah, Salt Lake City, UT, USA; Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, USA. ^[5]

关键词 Accelerated aging Dielectric encapsulation Doped silicon Electrochemical impedance Electrode materials Finite element analysis Neural interface Neuroprosthetics Parylene C Shunting Utah array