Enhanced Electrical and Optoelectronic Characteristics of Few-Layer Type-II SnSe/MoS<sub>2</sub> van der Waals Heterojunctions.

导出 LinkOut

翻译打印收藏纠错

第一作者： Shengxue,Yang

第一单位： School of Materials Science and Engineering, Beihang University , Beijing 100191, P. R. China.

作者： Shengxue,Yang ^[1] ; Minghui,Wu ^[2] ; Bin,Wang ^[1] ; Li-Dong,Zhao ^[1] ; Li,Huang ^[2] ; Chengbao,Jiang ^[1] ; Su-Huai,Wei ^[3]

作者单位： School of Materials Science and Engineering, Beihang University , Beijing 100191, P. R. China. ^[1] Department of Physics, South University of Science and Technology of China , Shenzhen 518005, P. R. China. ^[2] Beijing Computational Science Research Center , Beijing 100094, P. R. China. ^[3]

DOI 10.1021/acsami.7b15288

PMID 29134796

发布时间 2018-07-24

翻译满意度评价：

准确一般字义偏差语意偏离译文作用小提交

浏览10

ACS applied materials & interfaces

2017年9卷48期

42149-42155页

相似文献

中文期刊
外文期刊
学位论文
会议论文

检索历史清除

Enhanced Electrical and Optoelectronic Characteristics of Few-Layer Type-II SnSe/MoS<sub>2</sub> van der Waals Heterojunctions.

ACS applied materials & interfaces

相似文献

ACS applied materials & interfaces

相关期刊

参考文献：
指定格式：	NoteExpress EndNote RefWorks NoteFirst

检索历史 清除

Enhanced Electrical and Optoelectronic Characteristics of Few-Layer Type-II SnSe/MoS<sub>2</sub> van der Waals Heterojunctions.

ACS applied materials & interfaces

相似文献

ACS applied materials & interfaces

相关期刊

检索历史清除