Topological Phase Transition-Induced Triaxial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices.

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作者： Minhao,Zhang ^[1] ; Huaiqiang,Wang ^[2] ; Kejun,Mu ^[3] ; Pengdong,Wang ^[3] ; Wei,Niu ^[1] ; Shuai,Zhang ^[2] ; Guiling,Xiao ^[4] ; Yequan,Chen ^[1] ; Tong,Tong ^[1] ; Dongzhi,Fu ^[2] ; Xuefeng,Wang ^[1] ; Haijun,Zhang ^[5] ; Fengqi,Song ^[2] ; Feng,Miao ^[5] ; Zhe,Sun ^[2] ; Zhengcai,Xia ^[5] ; Xinran,Wang ^[2] ; Yongbing,Xu ^[5] ; Baigeng,Wang ^[3] ; Dingyu,Xing ^[4] ; Rong,Zhang ^[1]

作者单位： National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University , Nanjing 210093, China. ^[1] National Laboratory of Solid State Microstructures, School of Physics, Nanjing University , Nanjing 210093, China. ^[2] National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei 230029, China. ^[3] Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology , Wuhan 430074, China. ^[4] Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China. ^[5]

关键词 intersurface coupling topological critical point topological insulators topological phase transition triaxial vector magnetoresistance

DOI 10.1021/acsnano.7b08054

PMID 29294273

发布时间 2019-03-15

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