Tunneling Diode Based on WSe<sub>2</sub> /SnS<sub>2</sub> Heterostructure Incorporating High Detectivity and Responsivity.

导出 LinkOut

翻译打印收藏纠错

第一作者： Xing,Zhou

第一单位： State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China.

作者： Xing,Zhou ^[1] ; Xiaozong,Hu ^[1] ; Shasha,Zhou ^[1] ; Hongyue,Song ^[2] ; Qi,Zhang ^[1] ; Lejing,Pi ^[1] ; Liang,Li ^[1] ; Huiqiao,Li ^[1] ; Jingtao,Lü ^[2] ; Tianyou,Zhai ^[1]

作者单位： State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China. ^[1] School of Physics, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China. ^[2]

关键词 WSe2/SnS2 optoelectronics tunneling diodes vdW heterostructures

DOI 10.1002/adma.201703286

PMID 29315847

发布时间 2020-09-30

翻译满意度评价：

准确一般字义偏差语意偏离译文作用小提交