PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads.

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作者： Maximilian,Gebhard ^[1] ; Lukas,Mai ^[2] ; Lars,Banko ^[2] ; Felix,Mitschker ^[2] ; Christian,Hoppe ^[1] ; Montgomery,Jaritz ^[2] ; Dennis,Kirchheim ^[1] ; Christoph,Zekorn ; Teresa,de Los Arcos ; Dario,Grochla ; Rainer,Dahlmann ; Guido,Grundmeier ; Peter,Awakowicz ; Alfred,Ludwig ; Anjana,Devi

作者单位： Technical and Macromolecular Chemistry, University of Paderborn , 33098 Paderborn, Germany. ^[1] Institute for Plastics Processing (IKV), RWTH Aachen University , 52074 Aachen, Germany. ^[2]

关键词 PEALD dyads gas barrier in situ QCM interface

DOI 10.1021/acsami.7b14916

PMID 29338170

发布时间 2018-07-30

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ACS applied materials & interfaces

2018年10卷8期

7422-7434页

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PEALD of SiO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads.

ACS applied materials & interfaces

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PEALD of SiO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads.

ACS applied materials & interfaces

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ACS applied materials & interfaces

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