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Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE.

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第一作者： Aihua,Zhong

第一单位： Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen University, Shenzhen, 518060, China.;Shenzhen Key Laboratory of Sensor Technology, Shenzhen, 518060, China.

作者： Aihua,Zhong ^[1] ; Ping,Fan ^[2] ; Yuanting,Zhong ^[3] ; Dongping,Zhang ^[2] ; Fu,Li ^[2] ; Jingting,Luo ^[2] ; Yizhu,Xie ^[4] ; Kazuhiro,Hane ^[5]

作者单位： Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen University, Shenzhen, 518060, China.;Shenzhen Key Laboratory of Sensor Technology, Shenzhen, 518060, China. ^[1] Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen University, Shenzhen, 518060, China. ^[2] Department of Automotive Engineering, Foshan Polytechnic, Foshan, 528137, China. ^[3] Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen University, Shenzhen, 518060, China. yzxie@szu.edu.cn. ^[4] Department of Nanomechanics, Tohoku University, Sendai, 980-8579, Japan. ^[5]

关键词 Al droplets GaN Growth model Nanowall network

DOI 10.1186/s11671-018-2461-1

PMID 29442172

发布时间 2024-03-13

基金项目

61504084/National Natural Science Foundation of China JCYJ20160307144047526/Basical Research Program of Shenzhen 201554/Natural Science Foundation of SZU 827-000187/Natural Science Foundation of SZU

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准确一般字义偏差语意偏离译文作用小提交