Nano-Cathodoluminescence Measurement of Asymmetric Carrier Trapping and Radiative Recombination in GaN and InGaN Quantum Disks.

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第一作者： Julia I,Deitz

第一单位： 1Department of Materials Science and Engineering,The Ohio State University,Columbus,OH 43210,USA.

作者： Julia I,Deitz ^[1] ; A T M Golam,Sarwar ^[2] ; Santino D,Carnevale ^[2] ; Tyler J,Grassman ^[1] ; Roberto C,Myers ^[1] ; David W,McComb ^[1]

作者单位： 1Department of Materials Science and Engineering,The Ohio State University,Columbus,OH 43210,USA. ^[1] 2Department of Electrical and Computer Engineering,The Ohio State University,Columbus,OH 43210,USA. ^[2]

关键词 InGaN LED cathodoluminescence nanowires scanning transmission electron microscopy

DOI 10.1017/S143192761800017X

PMID 29699596

发布时间 2018-09-19

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Microscopy and microanalysis

2018年24卷2期

93-98页

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Nano-Cathodoluminescence Measurement of Asymmetric Carrier Trapping and Radiative Recombination in GaN and InGaN Quantum Disks.

Microscopy and microanalysis

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Nano-Cathodoluminescence Measurement of Asymmetric Carrier Trapping and Radiative Recombination in GaN and InGaN Quantum Disks.

Microscopy and microanalysis

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Microscopy and microanalysis

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