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High Performance Amplifier Element Realization via MoS<sub>2</sub>/GaTe Heterostructures.

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第一作者： Xiao,Yan

第一单位： State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China.

作者： Xiao,Yan ^[1] ; David Wei,Zhang ^[1] ; Chunsen,Liu ^[1] ; Wenzhong,Bao ^[1] ; Shuiyuan,Wang ^[1] ; Shijin,Ding ^[1] ; Gengfeng,Zheng ^[2] ; Peng,Zhou ^[1]

作者单位： State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China. ^[1] Laboratory of Advanced Materials Department of Chemistry Collaborative Innovation Center of Chemistry for Energy Materials Fudan University Shanghai 200433 China. ^[2]

关键词 2D materials bipolar junction transistor current amplification van der Waals heterostructure

DOI 10.1002/advs.201700830

PMID 29721428

发布时间 2024-03-23

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Advanced science (Weinheim, Baden-Wurttemberg, Germany)

2018年5卷4期

1700830页

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Advanced science (Weinheim, Baden-Wurttemberg, Germany)

2018年5卷4期

1700830页

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High Performance Amplifier Element Realization via MoS<sub>2</sub>/GaTe Heterostructures.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

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High Performance Amplifier Element Realization via MoS<sub>2</sub>/GaTe Heterostructures.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

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Advanced science (Weinheim, Baden-Wurttemberg, Germany)

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