Reliable Multivalued Conductance States in TaO <sub>x</sub> Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy Analysis.

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作者： Myoung-Jae,Lee ^[1] ; Gyeong-Su,Park ^[2] ; David H,Seo ^[3] ; Sung Min,Kwon ^[3] ; Hyeon-Jun,Lee ^[1] ; June-Seo,Kim ^[4] ; MinKyung,Jung ^[5] ; Chun-Yeol,You ^[2] ; Hyangsook,Lee ; Hee-Goo,Kim ; Su-Been,Pang ; Sunae,Seo ; Hyunsang,Hwang ; Sung Kyu,Park

作者单位： Department of Materials Science and Engineering , Seoul National University , Seoul 08826 , Korea. ^[1] School of Electrical and Electronic Engineering , Chung-Ang University , Seoul 06974 , Korea. ^[2] Samsung Advanced Institute of Technology, Samsung Electronics Co. , Suwon 443-803 , Korea. ^[3] Department of Physics , Sejong University , Seoul 143-747 , Korea. ^[4] Department of Materials Science and Engineering , Pohang University of Science and Technology , Pohang 790-784 , Korea. ^[5]

关键词 TaOx memristors artificial solid-state synapses in situ STEM analysis multivalued atomic switching

DOI 10.1021/acsami.8b09046

PMID 30033726

发布时间 2018-09-10

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