Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors.

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作者： Shi-Jing,Gong ^[1] ; Cheng,Gong ^[2] ; Yu-Yun,Sun ^[3] ; Wen-Yi,Tong ^[4] ; Chun-Gang,Duan ^[5] ; Jun-Hao,Chu ^[5] ; Xiang,Zhang ^[5]

作者单位： Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200062, China; sjgong@ee.ecnu.edu.cn cgong@berkeley.edu xiang@berkeley.edu. ^[1] Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China. ^[2] Nanoscale Science and Engineering Center, University of California, Berkeley, CA 94720; sjgong@ee.ecnu.edu.cn cgong@berkeley.edu xiang@berkeley.edu. ^[3] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720. ^[4] Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200062, China. ^[5]

关键词 2D magnetism 2D materials antiferromagnetic spintronics half metallicity spin field effect transistor

DOI 10.1073/pnas.1715465115

PMID 30076226

发布时间 2019-02-22

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