Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells.

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第一作者： George,Christian

第一单位： School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, UK. george.christian@manchester.ac.uk.

作者： George,Christian ^[1] ; Menno,Kappers ^[2] ; Fabien,Massabuau ^[3] ; Colin,Humphreys ^[4] ; Rachel,Oliver ^[5] ; Philip,Dawson ^[6]

作者单位： School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, UK. george.christian@manchester.ac.uk. ^[1] Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK. mjk30@cam.ac.uk. ^[2] Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK. fm350@cam.ac.uk. ^[3] Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK. c.humphreys@qmul.ac.uk. ^[4] School of Engineering and Materials Science, Queen Mary University of London, London E1 4NS, UK. c.humphreys@qmul.ac.uk. ^[5] Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK. rao28@cam.ac.uk. ^[6] School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, UK. burnleyphil@gmail.com. ^[7]

关键词 InGaN photoluminescence quantum well radiative lifetime underlayer

DOI 10.3390/ma11091736

PMID 30223545

发布时间 2020-09-30

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