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首页> ACS nano> Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS<sub>2</sub> in the Presence of Defects, Strain, and Charged Impurities.

Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS<sub>2</sub> in the Presence of Defects, Strain, and Charged Impurities.

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作者： Sudipta,Dubey ; Simone,Lisi ; Goutham,Nayak ; Felix,Herziger ; Van-Dung,Nguyen ; Toai,Le Quang ; Vladimir,Cherkez ; César,González ; Yannick J,Dappe ; Kenji,Watanabe ; Takashi,Taniguchi ; Laurence,Magaud ; Pierre,Mallet ; Jean-Yves,Veuillen ; Raul,Arenal ; Laëtitia,Marty ; Julien,Renard ; Nedjma,Bendiab ; Johann,Coraux ; Vincent,Bouchiat

DOI 10.1021/acsnano.8b07086

PMID 30234967

发布时间 2019-11-20

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准确一般字义偏差语意偏离译文作用小提交