Interface Properties Probed by Active THz Surface Emission in Graphene/SiO<sub>2</sub>/Si Heterostructures.

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作者： Zehan,Yao ^[1] ; Lipeng,Zhu ^[1] ; Yuanyuan,Huang ^[1] ; Longhui,Zhang ^[1] ; Wanyi,Du ^[1] ; Zhen,Lei ^[1] ; Ajay,Soni ^[2] ; Xinlong,Xu ^[1]

作者单位： Shaanxi Joint Lab of Graphene, State Key Lab Incubation Base of Photoelectric Technology and Functional Materials, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics and Photon-Technology , Northwest University , Xi'an 710069 , China. ^[1] School of Basic Sciences , Indian Institute of Technology , Mandi , Himachal Pradesh 175005 , India. ^[2]

关键词 THz emission graphene interface modulation silicon

DOI 10.1021/acsami.8b11301

PMID 30252433

发布时间 2019-11-20

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ACS applied materials & interfaces

2018年10卷41期

35599-35606页

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Interface Properties Probed by Active THz Surface Emission in Graphene/SiO<sub>2</sub>/Si Heterostructures.

ACS applied materials & interfaces

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ACS applied materials & interfaces

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Interface Properties Probed by Active THz Surface Emission in Graphene/SiO<sub>2</sub>/Si Heterostructures.

ACS applied materials & interfaces

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ACS applied materials & interfaces

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