Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method.

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作者： Jia-Cheng,Yu ^[1] ; Zai-Fa,Zhou ^[2] ; Jia-Le,Su ^[3] ; Chang-Feng,Xia ^[4] ; Xin-Wei,Zhang ^[5] ; Zong-Ze,Wu ^[6] ; Qing-An,Huang ^[7]

作者单位： Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China. 220151251@seu.edu.cn. ^[1] Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China. zfzhou@seu.edu.cn. ^[2] Central Semiconductor Manufacturing Corporation, Wuxi 214061, China. 220161278@seu.edu.cn. ^[3] Central Semiconductor Manufacturing Corporation, Wuxi 214061, China. hqa@seu.edu.cn. ^[4] Central Semiconductor Manufacturing Corporation, Wuxi 214061, China. sujl@csmc.crmicro.com. ^[5] Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China. xiacf@csmc.crmicro.com. ^[6] Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China. zhangxw@csmc.crmicro.com. ^[7]

关键词 Monte Carlo simulation deep reactive ion etching level set method ray tracing algorithm surface evolution

DOI 10.3390/mi9020074

PMID 30393350

发布时间 2020-10-01

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Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method.

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Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method.

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