Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS<sub>2</sub> Field-Effect Transistors.

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作者： Sang-Soo,Chee ^[1] ; Dongpyo,Seo ^[1] ; Hanggyu,Kim ^[1] ; Hanbyeol,Jang ^[1] ; Seungmin,Lee ^[2] ; Seung Pil,Moon ^[3] ; Kyu Hyoung,Lee ^[4] ; Sung Wng,Kim ^[5] ; Hyunyong,Choi ^[2] ; Moon-Ho,Ham ^[1]

作者单位： School of Materials Science and Engineering, Gwangju Institute of Science & Technology (GIST), Gwangju, 61005, Republic of Korea. ^[1] School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea. ^[2] KEPCO Research Institute, Korea Electric Power Corporation, Naju, 58214, Republic of Korea. ^[3] Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea. ^[4] Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea. ^[5]

关键词 Ag field-effect transistors graphene molybdenum disulfide transition metal dichalcogenides

DOI 10.1002/adma.201804422

PMID 30411825

发布时间 2020-09-30

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