Static and Dynamic Piezopotential Modulation in Piezo-Electret Gated MoS<sub>2</sub> Field-Effect Transistor.

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第一作者： Jing,Zhao

第一单位： Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China.

作者： Jing,Zhao ^[1] ; Zheng,Wei ^[2] ; Qian,Zhang ^[1] ; Hua,Yu ^[2] ; Shuopei,Wang ^[2] ; Xixi,Yang ^[1] ; Guoyun,Gao ^[1] ; Shanshan,Qin ^[1] ; Guangyu,Zhang ^[2] ; Qijun,Sun ^[3] ; Zhong Lin,Wang ^[1]

作者单位： Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China. ^[1] Beijing National Laboratory for Condensed Matter Physics and Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China. ^[2] Collaborative Innovation Center of Quantum Matter , Beijing Key Laboratory for Nanomaterials and Nanodevices , Beijing 100190 , China. ^[3] Center on Nanoenergy Research, School of Physical Science and Technology , Guangxi University , Nanning 530004 , China. ^[4] School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332-0245 , United States. ^[5]

关键词 MoS2 FET mechanical sensors optical and electric properties piezo-electret piezopotential modulation

DOI 10.1021/acsnano.8b07477

PMID 30563324

发布时间 2019-11-20

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