GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate.

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作者： Chang-Ju,Lee ^[1] ; Chul-Ho,Won ^[2] ; Jung-Hee,Lee ^[3] ; Sung-Ho,Hahm ^[4] ; Hongsik,Park ^[5]

作者单位： School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Korea. chjlee@knu.ac.kr. ^[1] School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Korea. chwon@ee.knu.ac.kr. ^[2] School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Korea. jlee@ee.knu.ac.kr. ^[3] School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Korea. shhahm@knu.ac.kr. ^[4] School of Electronics Engineering, College of IT Engineering, Kyungpook National University, Daegu 41566, Korea. hpark@ee.knu.ac.kr. ^[5]

关键词 Schottky-barrier (SB) metal-oxide-semiconductor field-effect transistor (MOSFET)UV image sensor gallium nitride (GaN)passive pixel sensor (PPS)photodetector ultraviolet (UV)

DOI 10.3390/s19051051

PMID 30832229

发布时间 2020-02-25

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准确一般字义偏差语意偏离译文作用小提交