High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al₂O₃ Gate Dielectric.

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作者： Seungbeom,Choi ^[1] ; Kyung-Tae,Kim ^[2] ; Sung Kyu,Park ^[3] ; Yong-Hoon,Kim ^[4]

作者单位： SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea. oyenice@skku.edu. ^[1] School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06974, Korea. 4444812@naver.com. ^[2] School of Electrical and Electronic Engineering, Chung-Ang University, Seoul 06974, Korea. skpark@cau.ac.kr. ^[3] SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea. yhkim76@skku.edu. ^[4] School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea. yhkim76@skku.edu. ^[5]

关键词 high mobility high-k dielectric inkjet printing metal-oxide semiconductors thin-film transistors

DOI 10.3390/ma12060852

PMID 30871272

发布时间 2020-10-01

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准确一般字义偏差语意偏离译文作用小提交