作者：
Eunsuk,Choi [1]
;
Soonhyung,Hwang [2]
;
Yousang,Yoon [3]
;
Hojun,Seo [4]
;
Jusin,Lee [5]
;
Seongoh,Yeom [6]
;
Gunwoo,Ryu [7]
;
Heewon,Yang [8]
;
Sunjin,Kim [9]
;
Onejae,Sul [10]
;
Seung-Beck,Lee [11]
作者单位：
Department of Electronic Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Korea. silver77@hanyang.ac.kr.
[1]
Department of Electronic Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Korea. hsh8701@gmail.com.
[2]
Department of Electronic Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Korea. ysyoon88@hanyang.ac.kr.
[3]
Department of Electronic Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Korea. masiks@hanyang.ac.kr.
[4]
Department of Electronic Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Korea. jusin19@hanyang.ac.kr.
[5]
Department of Electronic Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Korea. yso526@hanyang.ac.kr.
[6]
Department of Electronic Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Korea. rgw00@hanyang.ac.kr.
[7]
Department of Electronic Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Korea. heewon0820@hanyang.ac.kr.
[8]
Department of Electronic Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Korea. akangel0307@hanyang.ac.kr.
[9]
Institute of Nano Science and Technology, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Korea. ojsul@hanyang.ac.kr.
[10]
Department of Electronic Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Korea. sbl22@hanyang.ac.kr.
[11]
Institute of Nano Science and Technology, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Korea. sbl22@hanyang.ac.kr.
[12]
DOI
10.3390/s19061300
PMID
30875874
发布时间
2023-10-11
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