The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO<sub>X</sub> as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide.

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作者： Joong-Hyun,Park ^[1] ; Myung-Hun,Shin ^[2] ; Jun-Sin,Yi ^[3]

作者单位： School of Electronic Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea. jhyun21.park@gmail.com. ^[1] School of Electronics and Information Engineering, Korea Aerospace University, Goyang-City 412-791, Korea. mhshin@kau.ac.kr. ^[2] School of Electronic Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea. junsin@skku.edu. ^[3]

关键词 ITZO NVM charge trapping memory window retention transparent

DOI 10.3390/nano9050784

PMID 31121917

发布时间 2020-10-01

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Nanomaterials (Basel, Switzerland)

2019年9卷5期

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The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO<sub>X</sub> as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

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The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO<sub>X</sub> as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

相关期刊

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