Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes.

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第一作者： Marcin,Sarzyński

第一单位： Institute of High Pressure Physics PAS, Sokołowska 29/37, 01-142 Warsaw, Poland. sarzyn@unipress.waw.pl.

作者： Marcin,Sarzyński ^[1] ; Ewa,Grzanka ^[2] ; Szymon,Grzanka ^[3] ; Grzegorz,Targowski ^[4] ; Robert,Czernecki ^[3] ; Anna,Reszka ^[4] ; Vaclav,Holy ^[3] ; Shugo,Nitta ^[4] ; Zhibin,Liu ^[3] ; Hiroshi,Amano ^[4] ; Mike,Leszczyński ^[5]

作者单位： Institute of High Pressure Physics PAS, Sokołowska 29/37, 01-142 Warsaw, Poland. sarzyn@unipress.waw.pl. ^[1] TopGaN Ltd., Sokołowska 29/37, 01-142 Warsaw, Poland. sarzyn@unipress.waw.pl. ^[2] Institute of High Pressure Physics PAS, Sokołowska 29/37, 01-142 Warsaw, Poland. ^[3] TopGaN Ltd., Sokołowska 29/37, 01-142 Warsaw, Poland. ^[4] Institute of Physics PAS, Al. Lotnikow 32/46, 02-668 Warsaw, Poland. ^[5] Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Praha 2, Czech Republic. ^[6] Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan. ^[7] Department of Electrical Engineering and Computer Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan. ^[8] Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan. ^[9] Venture Business Laboratory, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan. ^[10]

关键词 InGaN multicolor emitters patterned substrate quantum wells vapor phase epitaxy

DOI 10.3390/ma12162583

PMID 31416124

发布时间 2020-09-30

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