Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process.

导出 OA

翻译打印收藏纠错

第一作者： Shuangtao,Liu

第一单位： State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.

作者： Shuangtao,Liu ^[1] ; Jing,Yang ^[2] ; Degang,Zhao ^[3] ; Desheng,Jiang ^[4] ; Jianjun,Zhu ^[5] ; Feng,Liang ^[6] ; Ping,Chen ^[1] ; Zongshun,Liu ^[1] ; Yao,Xing ^[2] ; Liyuan,Peng ^[1] ; Liqun,Zhang ^[1]

作者单位： State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China. ^[1] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China. ^[2] State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China. yangjing333@semi.ac.cn. ^[3] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China. yangjing333@semi.ac.cn. ^[4] State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China. dgzhao@red.semi.ac.cn. ^[5] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China. dgzhao@red.semi.ac.cn. ^[6] Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, China. ^[7]

关键词 In quantum dots In-rich layer Single InGaN layer

DOI 10.1186/s11671-019-3095-7

PMID 31420760

发布时间 2020-10-01

翻译满意度评价：

准确一般字义偏差语意偏离译文作用小提交